Infineon Dual HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8
- RS Stock No.:
- 223-8452
- Mfr. Part No.:
- AUIRF7341QTR
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 4000 units)*
$7,108.00
(exc. GST)
$7,820.00
(inc. GST)
Add 4000 units to get free delivery
Last RS stock
- Final 12,000 unit(s), ready to ship from another location
Units | Per unit | Per Reel* |
|---|---|---|
| 4000 - 4000 | $1.777 | $7,108.00 |
| 8000 - 8000 | $1.729 | $6,916.00 |
| 12000 + | $1.693 | $6,772.00 |
*price indicative
- RS Stock No.:
- 223-8452
- Mfr. Part No.:
- AUIRF7341QTR
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.1A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 3 V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.5mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.1A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 3 V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Height 1.5mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 4 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon HEXFET power MOSFET in a dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications.
Advanced planar technology
Dynamic dV/dT rating
Logic level gate drive
175°C operating temperature
Fast switching
Lead free
RoHS compliant
Automotive qualified
Related links
- Infineon Dual HEXFET 2 Type N-Channel MOSFET 55 V Enhancement, 8-Pin SO-8 AUIRF7341QTR
- Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET 55 V Enhancement, 8-Pin SO-8
- Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET 55 V Enhancement, 8-Pin SO-8 IRF7341GTRPBF
- Infineon Dual HEXFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon Dual HEXFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon Dual HEXFET 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PQFN
- Infineon Dual HEXFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC IRL6372TRPBF
- Infineon Dual HEXFET 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PQFN AUIRFN8459TR