Infineon HEXFET Type N-Channel MOSFET, 30 A, 80 V Enhancement, 4-Pin PQFN IRFH8311TRPBF

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Subtotal (1 pack of 15 units)*

$21.465

(exc. GST)

$23.61

(inc. GST)

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Units
Per unit
Per Pack*
15 - 15$1.431$21.47
30 - 75$1.388$20.82
90 - 225$1.347$20.21
240 - 465$1.307$19.61
480 +$1.267$19.01

*price indicative

Packaging Options:
RS Stock No.:
222-4747
Mfr. Part No.:
IRFH8311TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

80V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

30nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

96W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5mm

Height

1.17mm

Width

6.15 mm

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDSon (<1.15 mΩ)

Low Thermal Resistance to PCB (<0.8°C/W)

100% Rg tested

Low Profile (<0.9 mm)

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