- RS Stock No.:
- 222-4746
- Mfr. Part No.:
- IRFH8311TRPBF
- Brand:
- Infineon
Available for back order.
Price (ex. GST) Each (On a Reel of 4000)
$0.742
(exc. GST)
$0.816
(inc. GST)
Units | Per unit | Per Reel* |
---|---|---|
4000 - 16000 | $0.742 | $2,968.00 |
20000 + | $0.668 | $2,672.00 |
*price indicative
- RS Stock No.:
- 222-4746
- Mfr. Part No.:
- IRFH8311TRPBF
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for Metal Oxide Semiconductor Field-Effect Transistors. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDSon (<1.15 mΩ)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg tested
Low Profile (<0.9 mm)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 30 A |
Maximum Drain Source Voltage | 80 V |
Package Type | PQFN 5 x 6 |
Series | HEXFET |
Mounting Type | Surface Mount |
Pin Count | 4 |
Maximum Drain Source Resistance | 0.0021 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.35V |
Number of Elements per Chip | 1 |
Transistor Material | Silicon |
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