Infineon HEXFET Type N-Channel MOSFET, 100 A, 25 V Enhancement, 4-Pin PQFN IRFH5250TRPBF

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Subtotal (1 pack of 10 units)*

$23.84

(exc. GST)

$26.22

(inc. GST)

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Last RS stock
  • Final 15,980 unit(s), ready to ship from another location

Units
Per unit
Per Pack*
10 - 10$2.384$23.84
20 - 90$2.341$23.41
100 - 240$2.299$22.99
250 - 490$2.257$22.57
500 +$2.218$22.18

*price indicative

Packaging Options:
RS Stock No.:
222-4745
Mfr. Part No.:
IRFH5250TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

25V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

3.6W

Typical Gate Charge Qg @ Vgs

52nC

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Height

0.9mm

Length

6mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDSon (<1.15 mΩ)

Low Thermal Resistance to PCB (<0.8°C/W)

100% Rg tested

Low Profile (<0.9 mm)

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