Specifications

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	650V
	Series	NTMT190N
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	162W
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	34nC
	Maximum Operating Temperature	175°C
	Width	1.1 mm
	Standards/Approvals	No
	Length	8.1mm
	Height	8.1mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 650V
	Series NTMT190N
	Package Type PQFN
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 162W
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 34nC
	Maximum Operating Temperature 175°C
	Width 1.1 mm
	Standards/Approvals No
	Length 8.1mm
	Height 8.1mm
	Automotive Standard No

Datasheet - NTMT190N65S3HF

The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Ultra low gate charge

low effective output capacitance 316 pF

100% avalanche tested

onsemi NTMT190N Type N-Channel MOSFET, 20 A, 650 V Enhancement, 4-Pin PQFN

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