N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD35N10S3L26ATMA1
- RS Stock No.:
- 218-3043
- Mfr. Part No.:
- IPD35N10S3L26ATMA1
- Brand:
- Infineon
12330 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Pack of 15)
$2.027
(exc. GST)
$2.23
(inc. GST)
| Units | Per unit | Per Pack* |
| 15 - 615 | $2.027 | $30.405 |
| 630 - 1230 | $1.977 | $29.655 |
| 1245 + | $1.947 | $29.205 |
| *price indicative | ||
- RS Stock No.:
- 218-3043
- Mfr. Part No.:
- IPD35N10S3L26ATMA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon OptiMOS™-T series N-channel automotive MOSFET integrated with DPAK (TO-252) type package. It has low switching and conduction power losses.
N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
MSL1 up to 260°C peak reflow
175°C operating temperature
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 35 A |
| Maximum Drain Source Voltage | 100 V |
| Series | OptiMOS™-T |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.026 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.4V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
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