Infineon OptiMOS-T Type N-Channel MOSFET, 70 A, 120 V Enhancement, 3-Pin TO-252 IPD70N12S311ATMA1

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$24.60

(exc. GST)

$27.10

(inc. GST)

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  • 19,620 unit(s) ready to ship from another location
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Per Pack*
10 - 620$2.46$24.60
630 - 1240$2.416$24.16
1250 +$2.372$23.72

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Packaging Options:
RS Stock No.:
214-4390
Mfr. Part No.:
IPD70N12S311ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

120V

Series

OptiMOS-T

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

51nC

Maximum Operating Temperature

175°C

Length

6.65mm

Width

6.42 mm

Height

2.35mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

This Infineon OptiMOS MOSFET is suitable for automotive applications and it is 100% Avalanche tested.

It is Halogen-free according to IEC61249-2-21

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