Infineon OptiMOS-T Type N-Channel MOSFET, 70 A, 120 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

$3,822.50

(exc. GST)

$4,205.00

(inc. GST)

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  • 17,500 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
2500 - 10000$1.529$3,822.50
12500 +$1.376$3,440.00

*price indicative

RS Stock No.:
214-4389
Mfr. Part No.:
IPD70N12S311ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

120V

Series

OptiMOS-T

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

51nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

125W

Maximum Operating Temperature

175°C

Height

2.35mm

Length

6.65mm

Standards/Approvals

No

Width

6.42 mm

Automotive Standard

AEC-Q101

This Infineon OptiMOS MOSFET is suitable for automotive applications and it is 100% Avalanche tested.

It is Halogen-free according to IEC61249-2-21

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