Infineon HEXFET Type N-Channel MOSFET, 45 A, 250 V TO-263 IRFS4229TRLPBF

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$31.31

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$34.44

(inc. GST)

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Per Pack*
5 - 195$6.262$31.31
200 - 395$6.10$30.50
400 +$6.004$30.02

*price indicative

Packaging Options:
RS Stock No.:
217-2634
Mfr. Part No.:
IRFS4229TRLPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

250V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

48mΩ

Typical Gate Charge Qg @ Vgs

110nC

Maximum Power Dissipation Pd

330W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

9.65mm

Length

10.67mm

Width

4.83 mm

Standards/Approvals

EIA 418

Automotive Standard

No

The Infineon HEXFET® Power MOSFET is specifically designed for Sustain ; Energy Recovery & Pass switch applications in plasma Display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E pulse rating.

Advanced Process Technology

Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications

Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

Low QG for Fast Response

High Repetitive Peak Current Capability for Reliable Operation

Short Fall & Rise Times for Fast Switching

175°C Operating Junction Temperature for Improved Ruggedness

Repetitive Avalanche Capability for Robustness and Reliability

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