Infineon HEXFET Type N-Channel MOSFET, 45 A, 75 V Enhancement, 3-Pin TO-252 IRFR2607ZTRPBF

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Subtotal (1 pack of 5 units)*

$12.54

(exc. GST)

$13.795

(inc. GST)

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Units
Per unit
Per Pack*
5 - 45$2.508$12.54
50 - 95$1.95$9.75
100 - 245$1.754$8.77
250 - 995$1.72$8.60
1000 +$1.594$7.97

*price indicative

Packaging Options:
RS Stock No.:
262-6768
Mfr. Part No.:
IRFR2607ZTRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

34nC

Maximum Power Dissipation Pd

110W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

Ultra low on-resistance

Repetitive avalanche allowed up to Tjmax

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