Infineon HEXFET Type N-Channel MOSFET, 5 A, 200 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 3000 units)*

$1,860.00

(exc. GST)

$2,040.00

(inc. GST)

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  • 15,000 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
3000 - 12000$0.62$1,860.00
15000 +$0.558$1,674.00

*price indicative

RS Stock No.:
217-2616
Mfr. Part No.:
IRFR220NTRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

43W

Typical Gate Charge Qg @ Vgs

15nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

10.41mm

Length

6.73mm

Automotive Standard

No

The Infineon 200V Single N-Channel HEXFET Power MOSFET in a D-Pak package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface-mount power package

Capable of being wave-soldered

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