Infineon HEXFET Type N-Channel MOSFET, 5 A, 200 V Enhancement, 3-Pin TO-252

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 3000 units)*

$1,758.00

(exc. GST)

$1,935.00

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 15,000 unit(s) shipping from 01 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 - 12000$0.586$1,758.00
15000 +$0.527$1,581.00

*price indicative

RS Stock No.:
217-2616
Mfr. Part No.:
IRFR220NTRLPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

43W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

10.41mm

Length

6.73mm

Width

2.39 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 200V Single N-Channel HEXFET Power MOSFET in a D-Pak package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface-mount power package

Capable of being wave-soldered

Related links