N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK Infineon IRLR8743PBF

RS Stock No.:: 166-0945
Mfr. Part No.:: IRLR8743PBF
Brand:: Infineon

N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK Infineon IRLR8743PBF

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Subtotal (1 tube of 75 units)**

$126.08

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$138.68

(inc. GST)

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Units	Per unit	Per Tube**
75 - 300	$1.681	$126.075
375 +	$1.513	$113.475

**price indicative

RS Stock No.:: 166-0945
Mfr. Part No.:: IRLR8743PBF
Brand:: Infineon

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 160A Maximum Continuous Drain Current, 135W Maximum Power Dissipation - IRLR8743TRPBF

This MOSFET is designed for high-performance applications in the automation and electronics sectors. Utilising HEXFET technology, it achieves significant efficiency and reliability in power management. Its ability to handle high continuous drain currents makes it suitable for a variety of industrial settings.

Features & Benefits

• Handles a maximum continuous drain current of 160A for solid performance
• Offers a maximum drain-source voltage of 30V for dependable operation
• Low Rds(on) value of 3.9mΩ minimises power losses
• Designed as an enhancement mode transistor to improve switching efficiency
• Surface mount capabilities allow for easy integration into circuit designs
• Rated for high operating temperatures up to +175°C for improved thermal management

Applications

• High frequency synchronous buck converters in computer power supplies
• Isolated DC-DC converters in telecom systems
• Industrial power management and automation systems
• Devices requiring low gate threshold voltages for efficient switching
• Various electronic devices that demand a compact power solution

What is the impact of high temperatures on its performance?

Operating at elevated temperatures enhances its thermal performance, allowing it to manage high power levels effectively while ensuring stability in difficult conditions.

How does this technology improve efficiency in electronic devices?

The HEXFET technology significantly reduces power losses due to its low Rds(on), allowing devices to operate efficiently under high loads while generating less heat.

Can it be used in conjunction with other semiconductors?

Yes, it can be integrated with other semiconductor components in mixed-signal circuits, enhancing overall circuit functionality and performance.

What is the significance of its surface mount design?

The surface mount design supports compact assembly on PCBs, enhances thermal management, and optimises space in electronic applications.

How does it perform in switching applications?

This MOSFET performs well in switching applications due to its low gate charge, enabling faster switching with minimal power loss.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	160 A
Maximum Drain Source Voltage	30 V
Package Type	DPAK (TO-252)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	3.9 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.35V
Minimum Gate Threshold Voltage	1.35V
Maximum Power Dissipation	135 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	6.22mm
Length	6.73mm
Typical Gate Charge @ Vgs	39 nC @ 4.5 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Height	2.39mm
Minimum Operating Temperature	-55 °C