Infineon IPN Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin SOT-223 IPN60R360P7SATMA1

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$25.10

(exc. GST)

$27.60

(inc. GST)

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Units
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Per Pack*
20 - 740$1.255$25.10
760 - 1480$1.223$24.46
1500 +$1.205$24.10

*price indicative

Packaging Options:
RS Stock No.:
217-2543
Mfr. Part No.:
IPN60R360P7SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

600V

Series

IPN

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

36nC

Maximum Power Dissipation Pd

111W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.1mm

Length

8.8mm

Width

8.8 mm

Automotive Standard

No

The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.

Best-fit performance superjunction technology

Cost-effective package solution

Best-in-class price/performance ratio

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