Infineon HEXFET Type N-Channel MOSFET, 42 A, 100 V Enhancement, 3-Pin TO-263 IRF1310NSTRLPBF

RS Stock No.:: 215-2572
Mfr. Part No.:: IRF1310NSTRLPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 42 A, 100 V Enhancement, 3-Pin TO-263 IRF1310NSTRLPBF

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Subtotal (1 pack of 10 units)*

$16.95

(exc. GST)

$18.64

(inc. GST)

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In Stock

3,550 unit(s) ready to ship from another location

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Units	Per unit	Per Pack*
10 - 190	$1.695	$16.95
200 - 390	$1.665	$16.65
400 +	$1.633	$16.33

*price indicative

RS Stock No.:: 215-2572
Mfr. Part No.:: IRF1310NSTRLPBF
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	42A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	36mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	110nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	160W
	Maximum Operating Temperature	175°C
	Width	1.079 in
	Standards/Approvals	EIA 418
	Length	14.173in
	Height	1.197in
	Automotive Standard	No
	Distrelec Product Id	304-39-412

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 42A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 36mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 110nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 160W
	Maximum Operating Temperature 175°C
	Width 1.079 in
	Standards/Approvals EIA 418
	Length 14.173in
	Height 1.197in
	Automotive Standard No
	Distrelec Product Id 304-39-412

Datasheet - IRF1310NSTRLPBF

The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2pack is a surface mount power package capable of accommodating die sizes upto HEX-4. It provide the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2pack is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

Advanced Process Technology

Fully avalanche rated

Fast switching

Infineon HEXFET Type N-Channel MOSFET, 42 A, 100 V Enhancement, 3-Pin TO-263 IRF1310NSTRLPBF

FREE delivery for orders over $60.00 ex GST

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