Infineon CoolMOS P7 Type N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin TO-252 IPD80R3K3P7ATMA1

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Subtotal (1 pack of 25 units)*

$18.225

(exc. GST)

$20.05

(inc. GST)

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Per Pack*
25 - 600$0.729$18.23
625 - 1225$0.716$17.90
1250 +$0.704$17.60

*price indicative

Packaging Options:
RS Stock No.:
214-9051
Mfr. Part No.:
IPD80R3K3P7ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.3Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

18W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

5.8nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Height

2.41mm

Length

6.73mm

Width

6.22 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. These are easy to drive and to parallel, enabling higher power density designs, BOM savings and lower assembly costs. These are recommended for hard and soft switching fly back topologies for LED Lighting, low power Chargers and Adapters, Audio, AUX power and Industrial power.

It comes with Fully optimized portfolio

Integrated Zener Diode ESD protection

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