Infineon HEXFET Type N-Channel MOSFET, 180 A, 40 V, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

$1,430.40

(exc. GST)

$1,573.60

(inc. GST)

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  • 2,400 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
800 - 3200$1.788$1,430.40
4000 +$1.61$1,288.00

*price indicative

RS Stock No.:
214-4441
Mfr. Part No.:
IRF1404ZSTRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.7mΩ

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

200W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

150nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche

It is lead-free

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