Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

$2,540.00

(exc. GST)

$2,795.00

(inc. GST)

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In Stock
  • 7,500 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
2500 - 2500$1.016$2,540.00
5000 - 7500$0.991$2,477.50
10000 +$0.976$2,440.00

*price indicative

RS Stock No.:
214-4373
Mfr. Part No.:
IPD30N06S2L13ATMA4
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

55V

Series

OptiMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

54nC

Maximum Power Dissipation Pd

136W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

6.65mm

Standards/Approvals

No

Height

2.35mm

Width

6.42 mm

Automotive Standard

AEC-Q101

This Infineon OptiMOS MOSFET provides high current capability, and Lowest switching and conduction power losses for highest thermal efficiency. It is 100% Avalanche tested.

It is lead-free

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