Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252 IPD30N06S2L13ATMA4

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Subtotal (1 pack of 10 units)*

$11.47

(exc. GST)

$12.62

(inc. GST)

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Per Pack*
10 - 620$1.147$11.47
630 - 1240$1.118$11.18
1250 +$1.101$11.01

*price indicative

Packaging Options:
RS Stock No.:
214-4374
Mfr. Part No.:
IPD30N06S2L13ATMA4
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

55V

Series

OptiMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

54nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

136W

Maximum Operating Temperature

175°C

Width

6.42 mm

Standards/Approvals

No

Length

6.65mm

Height

2.35mm

Automotive Standard

AEC-Q101

This Infineon OptiMOS MOSFET provides high current capability, and Lowest switching and conduction power losses for highest thermal efficiency. It is 100% Avalanche tested.

It is lead-free

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