Infineon OptiMOS Type N-Channel MOSFET, 50 A, 55 V Enhancement, 3-Pin TO-252 IPD50N06S2L13ATMA2

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$15.39

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$16.93

(inc. GST)

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Per Pack*
10 - 620$1.539$15.39
630 - 1240$1.501$15.01
1250 +$1.478$14.78

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Packaging Options:
RS Stock No.:
214-4377
Mfr. Part No.:
IPD50N06S2L13ATMA2
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

55V

Series

OptiMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

54nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

136W

Maximum Operating Temperature

175°C

Width

6.42 mm

Length

6.65mm

Standards/Approvals

No

Height

2.35mm

Automotive Standard

AEC-Q101

This Infineon OptiMOS MOSFET provides high current capability, and Lowest switching and conduction power losses for highest thermal efficiency. It is 100% Avalanche tested.

Optimized total gate charge enables smaller driver output stages

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