STMicroelectronics SCT1000N170 Type N-Channel MOSFET, 7 A, 1700 V Enhancement, 3-Pin Hip-247

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Subtotal (1 tube of 30 units)*

$605.61

(exc. GST)

$666.18

(inc. GST)

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Units
Per unit
Per Tube*
30 - 120$20.187$605.61
150 +$18.168$545.04

*price indicative

RS Stock No.:
212-2091
Mfr. Part No.:
SCT1000N170
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

1700V

Package Type

Hip-247

Series

SCT1000N170

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.66Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

13.3nC

Forward Voltage Vf

4.5V

Maximum Power Dissipation Pd

96W

Maximum Operating Temperature

200°C

Height

5.15mm

Length

15.75mm

Width

20.15 mm

Standards/Approvals

No

Automotive Standard

No

SiC MOSFET


The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability.

High speed switching performance

Very fast and robust intrinsic body diode

Low capacitances

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