N-Channel MOSFET, 60 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCTW60N120G2
- RS Stock No.:
- 239-5529
- Mfr. Part No.:
- SCTW60N120G2
- Brand:
- STMicroelectronics
270 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Tube of 30)
$42.294
(exc. GST)
$46.523
(inc. GST)
| Units | Per unit | Per Tube* |
| 30 - 30 | $42.294 | $1,268.82 |
| 60 - 60 | $40.18 | $1,205.40 |
| 90 + | $38.17 | $1,145.10 |
| *price indicative | ||
- RS Stock No.:
- 239-5529
- Mfr. Part No.:
- SCTW60N120G2
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability
Extremely low gate charge and input capacitance
Very high operating junction temperature capability
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | HiP247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
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