STMicroelectronics SCTW90 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 3-Pin Hip-247

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Subtotal (1 tube of 30 units)*

$1,572.48

(exc. GST)

$1,729.74

(inc. GST)

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  • Shipping from 31 August 2026
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Units
Per unit
Per Tube*
30 - 30$52.416$1,572.48
60 - 90$51.106$1,533.18
120 +$50.319$1,509.57

*price indicative

RS Stock No.:
201-0886
Mfr. Part No.:
SCTW90N65G2V
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTW90

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

565W

Forward Voltage Vf

2.5V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

157nC

Maximum Gate Source Voltage Vgs

18 V

Maximum Operating Temperature

200°C

Height

20.15mm

Width

5.15 mm

Standards/Approvals

No

Length

15.75mm

Automotive Standard

No

The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 119A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very high operating junction temperature capability (TJ = 175 °C)

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitances

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