N-Channel MOSFET, 8.4 A, 600 V, 3-Pin D2PAK Vishay SiHB186N60EF-GE3
- RS Stock No.:
- 210-4975
- Mfr. Part No.:
- SiHB186N60EF-GE3
- Brand:
- Vishay
5985 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Pack of 5)
$3.802
(exc. GST)
$4.182
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | $3.802 | $19.01 |
| 15 - 20 | $3.706 | $18.53 |
| 25 + | $3.65 | $18.25 |
*price indicative
- RS Stock No.:
- 210-4975
- Mfr. Part No.:
- SiHB186N60EF-GE3
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
The Vishay EF Series Power MOSFET With Fast Body Diode has D2PAK (TO-263) package type.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 8.4 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | D2PAK (TO-263) |
| Series | EF |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.168 Ω |
| Maximum Gate Threshold Voltage | 3 → 5V |
| Number of Elements per Chip | 1 |
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