DiodesZetex DMP31 Type P-Channel MOSFET, 380 mA, 30 V Enhancement, 3-Pin SOT-323
- RS Stock No.:
- 206-0124
- Mfr. Part No.:
- DMP31D7LW-7
- Brand:
- DiodesZetex
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$9.60
(exc. GST)
$10.55
(inc. GST)
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In Stock
- 2,750 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 700 | $0.192 | $9.60 |
| 750 - 1450 | $0.187 | $9.35 |
| 1500 + | $0.184 | $9.20 |
*price indicative
- RS Stock No.:
- 206-0124
- Mfr. Part No.:
- DMP31D7LW-7
- Brand:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 380mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-323 | |
| Series | DMP31 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.29W | |
| Typical Gate Charge Qg @ Vgs | 0.36nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2mm | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 380mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-323 | ||
Series DMP31 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.29W | ||
Typical Gate Charge Qg @ Vgs 0.36nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 2mm | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 30V P- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20V with 0.29 W thermal power dissipation.
Low on-resistance
Low input capacitance
ESD protected gate
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