SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247-4 onsemi NVH4L160N120SC1

RS Stock No.:: 202-5743
Mfr. Part No.:: NVH4L160N120SC1
Brand:: onsemi

SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247-4 onsemi NVH4L160N120SC1

On back order for despatch 25/09/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (In a Pack of 5)

$26.462

(exc. GST)

$29.108

(inc. GST)

Units	Per unit	Per Pack*
5 - 110	$26.462	$132.31
115 - 220	$25.802	$129.01
225 +	$25.406	$127.03
*price indicative

RS Stock No.:: 202-5743
Mfr. Part No.:: NVH4L160N120SC1
Brand:: onsemi

Technical data sheets

Datasheet - NVH4L160N120SC1

Legislation and Compliance

Product Details

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L

The ON Semiconductor Silicon Carbide Power MOSFET runs with 17.3 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified
100% avalanche tested
Low effective output capacitance
RoHS compliant

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	17.3 A
Maximum Drain Source Voltage	1200 V
Series	NVH
Package Type	TO-247-4
Mounting Type	Through Hole
Pin Count	4
Maximum Drain Source Resistance	0.16 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.3V
Number of Elements per Chip	1
Transistor Material	SiC