SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247-4 onsemi NVH4L080N120SC1

RS Stock No.:: 202-5740
Mfr. Part No.:: NVH4L080N120SC1
Brand:: onsemi

SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247-4 onsemi NVH4L080N120SC1

410 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 2)

$31.685

(exc. GST)

$34.853

(inc. GST)

Units	Per unit	Per Pack*
2 - 112	$31.685	$63.37
114 - 224	$31.13	$62.26
226 +	$30.425	$60.85

*price indicative

RS Stock No.:: 202-5740
Mfr. Part No.:: NVH4L080N120SC1
Brand:: onsemi

Technical data sheets

Datasheet - NVH4L080N120SC1

Legislation and Compliance

Product Details

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 80 mΩ, TO247-4L

The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter, Automotive Auxiliary Motor Drive applications.

AEC Q101 qualified
100% avalanche tested
Low effective output capacitance
RoHS compliant

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	29 A
Maximum Drain Source Voltage	1200 V
Package Type	TO-247-4
Series	NVH
Mounting Type	Through Hole
Pin Count	4
Maximum Drain Source Resistance	0.08 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.3V
Transistor Material	SiC
Number of Elements per Chip	1