onsemi NVH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247 NVH4L040N120SC1
- RS Stock No.:
- 202-5738
- Mfr. Part No.:
- NVH4L040N120SC1
- Brand:
- onsemi
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Subtotal (1 pack of 2 units)*
$59.69
(exc. GST)
$65.66
(inc. GST)
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- Plus 394 unit(s) shipping from 05 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 112 | $29.845 | $59.69 |
| 114 - 224 | $29.10 | $58.20 |
| 226 + | $28.645 | $57.29 |
*price indicative
- RS Stock No.:
- 202-5738
- Mfr. Part No.:
- NVH4L040N120SC1
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NVH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 319W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -50°C | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Operating Temperature | 170°C | |
| Width | 5.2 mm | |
| Standards/Approvals | No | |
| Length | 15.8mm | |
| Height | 22.74mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NVH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 319W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -50°C | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Operating Temperature 170°C | ||
Width 5.2 mm | ||
Standards/Approvals No | ||
Length 15.8mm | ||
Height 22.74mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, TO247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 58 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
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