SiC N-Channel MOSFET Transistor, 84 A, 1200 V, 4-Pin TO-247-4 onsemi NTH4L020N120SC1

RS Stock No.:: 202-5697
Mfr. Part No.:: NTH4L020N120SC1
Brand:: onsemi

SiC N-Channel MOSFET Transistor, 84 A, 1200 V, 4-Pin TO-247-4 onsemi NTH4L020N120SC1

400 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each

$57.07

(exc. GST)

$62.78

(inc. GST)

Units	Per unit
1 - 112	$57.07
113 - 224	$56.20
225 +	$54.80

RS Stock No.:: 202-5697
Mfr. Part No.:: NTH4L020N120SC1
Brand:: onsemi

Technical data sheets

Datasheet - NTH4L020N120SC1

Legislation and Compliance

Product Details

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L

The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.

20mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	84 A
Maximum Drain Source Voltage	1200 V
Series	NTH
Package Type	TO-247-4
Mounting Type	Through Hole
Pin Count	4
Maximum Drain Source Resistance	0.028 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.3
Number of Elements per Chip	1
Transistor Material	SiC