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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	17.3A
	Maximum Drain Source Voltage Vds	1200V
	Series	NTH
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	224mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	111W
	Maximum Gate Source Voltage Vgs	25 V
	Typical Gate Charge Qg @ Vgs	34nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	4V
	Maximum Operating Temperature	175°C
	Length	18.62mm
	Width	5.2 mm
	Height	22.74mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 17.3A
	Maximum Drain Source Voltage Vds 1200V
	Series NTH
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 224mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 111W
	Maximum Gate Source Voltage Vgs 25 V
	Typical Gate Charge Qg @ Vgs 34nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 4V
	Maximum Operating Temperature 175°C
	Length 18.62mm
	Width 5.2 mm
	Height 22.74mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - NTH4L160N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L

The ON Semiconductor Silicon Carbide Power MOSFET runs with 17.3 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.

160mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

onsemi NTH Type N-Channel MOSFET, 17.3 A, 1200 V Enhancement, 4-Pin TO-247

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L

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