STMicroelectronics SCTW90 N-Channel MOSFET, 119 A, 650 V Enhancement, 3-Pin Hip-247 SCTW90N65G2V
- RS Stock No.:
- 201-0887
- Mfr. Part No.:
- SCTW90N65G2V
- Brand:
- STMicroelectronics
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- RS Stock No.:
- 201-0887
- Mfr. Part No.:
- SCTW90N65G2V
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 119A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCTW90 | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.5V | |
| Maximum Gate Source Voltage Vgs | 18V | |
| Typical Gate Charge Qg @ Vgs | 157nC | |
| Maximum Power Dissipation Pd | 565W | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Width | 5.15mm | |
| Length | 15.75mm | |
| Height | 20.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 119A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCTW90 | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.5V | ||
Maximum Gate Source Voltage Vgs 18V | ||
Typical Gate Charge Qg @ Vgs 157nC | ||
Maximum Power Dissipation Pd 565W | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Width 5.15mm | ||
Length 15.75mm | ||
Height 20.15mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 119A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very high operating junction temperature capability (TJ = 175 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances
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