SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTWA35N65G2V
- RS Stock No.:
- 204-3957
- Mfr. Part No.:
- SCTWA35N65G2V
- Brand:
- STMicroelectronics
On back order for despatch 28/12/2024, delivery within 10 working days from despatch date.
Price (ex. GST) Each (In a Tube of 30)
$20.001
(exc. GST)
$22.001
(inc. GST)
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 120 | $20.001 | $600.03 |
| 150 + | $18.001 | $540.03 |
*price indicative
- RS Stock No.:
- 204-3957
- Mfr. Part No.:
- SCTWA35N65G2V
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
The STMicroelectronics silicon carbide Power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of both on-resistance and switching losses is almost independent of junction temperature.
Low capacitance
Very fast and robust intrinsic body diode
Very tight variation of on-resistance vs. temperature
Very fast and robust intrinsic body diode
Very tight variation of on-resistance vs. temperature
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 45 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | HiP247 |
| Series | SCTWA35N65G2V |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.072 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.2V |
| Transistor Material | SiC |
| Number of Elements per Chip | 1 |
Related links
- SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247...
- SiC N-Channel SiC Power Module, 45 A, 1200 V, 3-Pin HiP247...
- SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247...
- SiC N-Channel SiC Power Module, 16 A, 1200 V Depletion, 3-Pin...
- SiC N-Channel SiC Power Module, 12 A, 1200 V Depletion, 3-Pin...
- SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247...
- SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247...
- SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247...