N-Channel MOSFET Transistor, 25 A, 3-Pin TO-220 STMicroelectronics STP26N65DM2

RS Stock No.:: 192-4952
Mfr. Part No.:: STP26N65DM2
Brand:: STMicroelectronics

N-Channel MOSFET Transistor, 25 A, 3-Pin TO-220 STMicroelectronics STP26N65DM2

Available for back order.

Price (ex. GST) Each (In a Pack of 5)

$6.16

(exc. GST)

$6.78

(inc. GST)

Units	Per unit	Per Pack*
5 +	$6.16	$30.80

*price indicative

RS Stock No.:: 192-4952
Mfr. Part No.:: STP26N65DM2
Brand:: STMicroelectronics

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance

Extremely high dv/dt ruggedness
Zener-protected

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	25 A
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	190 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	160 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±25 V
Width	4.6mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	35.5 nC @ 10 V
Length	10.4mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.6V
Height	15.75mm

N-Channel MOSFET Transistor, 25 A, 3-Pin TO-220 STMicroelectronics STP26N65DM2

Technical data sheets

Legislation and Compliance

Product Details

Specifications

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