N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXYS IXTH12N65X2

RS Stock No.:: 146-1786
Mfr. Part No.:: IXTH12N65X2
Brand:: IXYS

N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXYS IXTH12N65X2

This image is representative of the product range

On back order for despatch 25/11/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (In a Tube of 30)

$6.538

(exc. GST)

$7.192

(inc. GST)

Units	Per unit	Per Tube*
30 - 30	$6.538	$196.14
60 - 90	$6.374	$191.22
120 +	$6.276	$188.28
*price indicative

RS Stock No.:: 146-1786
Mfr. Part No.:: IXTH12N65X2
Brand:: IXYS

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: US

Product Details

N-channel Power MOSFET, IXYS X2-Class Series

The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	12 A
Maximum Drain Source Voltage	650 V
Package Type	TO-247
Series	X2-Class
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	300 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	180 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	17.7 nC @ 10 V
Length	16.24mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Width	21.45mm
Height	5.3mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.4V