STMicroelectronics Single 1 Type N-Channel MOSFET, 72 A, 600 V Enhancement, 3-Pin TO-247 STWA75N60DM6
- RS Stock No.:
- 195-2678
- Mfr. Part No.:
- STWA75N60DM6
- Brand:
- STMicroelectronics
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- RS Stock No.:
- 195-2678
- Mfr. Part No.:
- STWA75N60DM6
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 36mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.9mm | |
| Height | 21.1mm | |
| Width | 5.1mm | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 36mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Length 15.9mm | ||
Height 21.1mm | ||
Width 5.1mm | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) * area with one of the most effective switching behaviors available in the market for the most demanding high efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
Extremely high dv/dt ruggedness
Zener-protected
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