STMicroelectronics Single 1 Type N, Type N-Channel, 25 A, 650 V Enhancement, 3-Pin TO-220 STP26N65DM2

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Subtotal (1 tube of 50 units)*

$222.40

(exc. GST)

$244.65

(inc. GST)

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Units
Per unit
Per Tube*
50 - 200$4.448$222.40
250 +$4.003$200.15

*price indicative

RS Stock No.:
192-4662
Mfr. Part No.:
STP26N65DM2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N, Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Mount Type

Surface, Through Hole, Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

190Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

35.5nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

160W

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Standards/Approvals

FCC Part 68, RoHS, TIA-1096-A

Length

10.4mm

Width

4.6 mm

Height

15.75mm

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and Ideal for bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

Extremely high dv/dt ruggedness

Zener-protected

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