N-Channel MOSFET Transistor, 25 A, 600 V, 5-Pin PowerFLAT 8 x 8 HV STMicroelectronics STL45N60DM6
- RS Stock No.:
- 192-4899
- Mfr. Part No.:
- STL45N60DM6
- Brand:
- STMicroelectronics
Available for back order.
Price (ex. GST) Each (In a Pack of 2)
$10.06
(exc. GST)
$11.07
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 748 | $10.06 | $20.12 |
| 750 - 1498 | $9.815 | $19.63 |
| 1500 + | $9.67 | $19.34 |
*price indicative
- RS Stock No.:
- 192-4899
- Mfr. Part No.:
- STL45N60DM6
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
Extremely high dv/dt ruggedness
Zener-protected
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
Extremely high dv/dt ruggedness
Zener-protected
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 25 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | PowerFLAT 8 x 8 HV |
| Mounting Type | Surface Mount |
| Pin Count | 5 |
| Maximum Drain Source Resistance | 110 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.75V |
| Minimum Gate Threshold Voltage | 3.25V |
| Maximum Power Dissipation | 160 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±25 V |
| Length | 8.1mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 44 nC @ 10 V |
| Width | 8.1mm |
| Height | 0.9mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.5V |
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