- RS Stock No.:
- 210-8740
- Mfr. Part No.:
- STD12N60DM6
- Brand:
- STMicroelectronics
On back order for despatch 20/05/2025, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Pack of 5)
$3.444
(exc. GST)
$3.788
(inc. GST)
Units | Per unit | Per Pack* |
5 + | $3.444 | $17.22 |
*price indicative |
- RS Stock No.:
- 210-8740
- Mfr. Part No.:
- STD12N60DM6
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 10 A |
Maximum Drain Source Voltage | 600 V |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 390 mΩ |
Maximum Gate Threshold Voltage | 4.75V |
Number of Elements per Chip | 1 |
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