Vishay SiRA99DP Type P-Channel MOSFET, 195 A, 30 V Enhancement, 8-Pin SO-8 SIRA99DP-T1-GE3

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Subtotal (1 pack of 5 units)*

$22.25

(exc. GST)

$24.50

(inc. GST)

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5 - 745$4.45$22.25
750 - 1495$4.37$21.85
1500 +$4.286$21.43

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Packaging Options:
RS Stock No.:
188-5097
Mfr. Part No.:
SIRA99DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

195A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

SiRA99DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

104W

Forward Voltage Vf

-1.1V

Typical Gate Charge Qg @ Vgs

172.5nC

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.07mm

Standards/Approvals

No

Length

5.99mm

Width

5 mm

Automotive Standard

No

P-Channel 30 V (D-S) MOSFET.

TrenchFET® Gen IV p-channel power MOSFET

Very low RDS(on) minimizes voltage drop and reduces conduction loss

Eliminates the need for charge pump

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