Vishay SiRA99DP Type P-Channel MOSFET, 195 A, 30 V Enhancement, 8-Pin SO-8
- RS Stock No.:
- 188-4884
- Mfr. Part No.:
- SIRA99DP-T1-GE3
- Brand:
- Vishay
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 188-4884
- Mfr. Part No.:
- SIRA99DP-T1-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SiRA99DP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 172.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5 mm | |
| Standards/Approvals | No | |
| Height | 1.07mm | |
| Length | 5.99mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SiRA99DP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 172.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 150°C | ||
Width 5 mm | ||
Standards/Approvals No | ||
Height 1.07mm | ||
Length 5.99mm | ||
Automotive Standard No | ||
P-Channel 30 V (D-S) MOSFET.
TrenchFET® Gen IV p-channel power MOSFET
Very low RDS(on) minimizes voltage drop and reduces conduction loss
Eliminates the need for charge pump
Related links
- Vishay P-Channel MOSFET 30 V, 8-Pin PowerPAK SO-8 SIRA99DP-T1-GE3
- Vishay P-Channel MOSFET 30 V, 8-Pin PowerPak SO-8 SIR1309DP-T1-GE3
- Vishay P-Channel MOSFET 30 V, 8-Pin PowerPAK SO-8 SI7149ADP-T1-GE3
- Vishay P-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8S SiSS05DN-T1-GE3
- Vishay P-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3
- Vishay P-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8 SI7129DN-T1-GE3
- Vishay P-Channel MOSFET 30 V, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3
- Vishay P-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8SH SiSH101DN-T1-GE3
