- RS Stock No.:
- 188-5013
- Mfr. Part No.:
- SiSS05DN-T1-GE3
- Brand:
- Vishay
On back order for despatch 06/11/2024, delivery within 10 working days from despatch date.
Price (ex. GST) Each (In a Pack of 10)
$1.552
(exc. GST)
$1.707
(inc. GST)
Units | Per unit | Per Pack* |
---|---|---|
10 - 740 | $1.552 | $15.52 |
750 - 1490 | $1.53 | $15.30 |
1500 + | $1.49 | $14.90 |
*price indicative
- RS Stock No.:
- 188-5013
- Mfr. Part No.:
- SiSS05DN-T1-GE3
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
P-Channel 30 V (D-S) MOSFET.
TrenchFET® Gen IV p-channel power MOSFET
Provides exceptionally low RDS(on) in a compact package that is thermally enhanced
Enables higher power density
Provides exceptionally low RDS(on) in a compact package that is thermally enhanced
Enables higher power density
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 108 A |
Maximum Drain Source Voltage | 30 V |
Package Type | PowerPAK 1212-8S |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 5.8 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.2V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 65.7 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +16 V |
Number of Elements per Chip | 1 |
Width | 3.3mm |
Typical Gate Charge @ Vgs | 76 nC @ 10 V |
Length | 3.3mm |
Maximum Operating Temperature | +150 °C |
Height | 0.78mm |
Forward Diode Voltage | 1.1V |
Minimum Operating Temperature | -55 °C |
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