P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-8S Vishay SiSS61DN-T1-GE3

RS Stock No.:: 188-4905
Mfr. Part No.:: SiSS61DN-T1-GE3
Brand:: Vishay

P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-8S Vishay SiSS61DN-T1-GE3

Bulk discount available

Subtotal (1 reel of 3000 units)**

$1,992.00

(exc. GST)

$2,190.00

(inc. GST)

On back order for despatch 01/08/2025, delivery within 10 working days from despatch date.*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over $80.00 ex GST

Units	Per unit	Per Reel**
3000 - 3000	$0.664	$1,992.00
6000 - 9000	$0.648	$1,944.00
12000 +	$0.638	$1,914.00

**price indicative

RS Stock No.:: 188-4905
Mfr. Part No.:: SiSS61DN-T1-GE3
Brand:: Vishay

Datasheet SiSS61DN-T1-GE3

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	111.9 A
Maximum Drain Source Voltage	20 V
Package Type	PowerPAK 1212-8S
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	9.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	0.9V
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	65.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±8 V
Number of Elements per Chip	1
Length	3.3mm
Typical Gate Charge @ Vgs	154 nC @ 10 V
Maximum Operating Temperature	+150 °C
Width	3.3mm
Forward Diode Voltage	1.2V
Height	0.78mm
Minimum Operating Temperature	-55 °C

P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-8S Vishay SiSS61DN-T1-GE3

FREE delivery for orders over $80.00 ex GST

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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