P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-8S Vishay SiSS61DN-T1-GE3

RS Stock No.:: 188-4905
Mfr. Part No.:: SiSS61DN-T1-GE3
Brand:: Vishay

P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-8S Vishay SiSS61DN-T1-GE3

On back order for despatch 20/11/2024, delivery within 10 working days from despatch date.

Price (ex. GST) Each (On a Reel of 3000)

$0.661

(exc. GST)

$0.727

(inc. GST)

Units	Per unit	Per Reel*
3000 - 3000	$0.661	$1,983.00
6000 - 9000	$0.644	$1,932.00
12000 +	$0.634	$1,902.00

*price indicative

RS Stock No.:: 188-4905
Mfr. Part No.:: SiSS61DN-T1-GE3
Brand:: Vishay

Datasheet SiSS61DN-T1-GE3

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	111.9 A
Maximum Drain Source Voltage	20 V
Package Type	PowerPAK 1212-8S
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	9.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	0.9V
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	65.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±8 V
Number of Elements per Chip	1
Width	3.3mm
Length	3.3mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	154 nC @ 10 V
Forward Diode Voltage	1.2V
Height	0.78mm
Minimum Operating Temperature	-55 °C

P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-8S Vishay SiSS61DN-T1-GE3

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