Dual N-Channel MOSFET, 197 (Channel 2) A, 76 (Channel 1) A, 30 (Channel 1) V, 30 (Channel 2) V, 8-Pin PowerPAIR 6 x 5 F

RS Stock No.:: 188-5009
Mfr. Part No.:: SiZF920DT-T1-GE3
Brand:: Vishay

Dual N-Channel MOSFET, 197 (Channel 2) A, 76 (Channel 1) A, 30 (Channel 1) V, 30 (Channel 2) V, 8-Pin PowerPAIR 6 x 5 F

999999 In stock for delivery within 1 working day(s)

Price (ex. GST) Each (In a Pack of 5)

$3.046

(exc. GST)

$3.351

(inc. GST)

Units	Per unit	Per Pack*
5 +	$3.046	$15.23

*price indicative

RS Stock No.:: 188-5009
Mfr. Part No.:: SiZF920DT-T1-GE3
Brand:: Vishay

Datasheet SiZF920DT-T1-GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	197 (Channel 2) A, 76 (Channel 1) A
Maximum Drain Source Voltage	30 (Channel 1) V, 30 (Channel 2) V
Package Type	PowerPAIR 6 x 5 F
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	0.0014 (Channel 2) Ω, 0.005 (Channel 1) Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2 (Channel 2) V, 2.4 (Channel 1) V
Minimum Gate Threshold Voltage	1.1 (Channel 1) V, 1.1 (Channel 2) V
Maximum Power Dissipation	28 W, 74 W
Transistor Configuration	Dual
Maximum Gate Source Voltage	+16 V, +20 V, -12 V, -16 V
Width	5.1mm
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	19 nC @ 15 V (Channel 1), 83 nC @ 15 V (Channel 2)
Length	6.1mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	0.7mm

Dual N-Channel MOSFET, 197 (Channel 2) A, 76 (Channel 1) A, 30 (Channel 1) V, 30 (Channel 2) V, 8-Pin PowerPAIR 6 x 5 F

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