Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix SiZ348DT-T1-GE3

RS Stock No.:: 178-3702
Mfr. Part No.:: SiZ348DT-T1-GE3
Brand:: Vishay Siliconix

Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix SiZ348DT-T1-GE3

3000 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 3000)

$0.791

(exc. GST)

$0.87

(inc. GST)

Units	Per unit	Per Reel*
3000 - 3000	$0.791	$2,373.00
6000 - 9000	$0.771	$2,313.00
12000 +	$0.759	$2,277.00
*price indicative

RS Stock No.:: 178-3702
Mfr. Part No.:: SiZ348DT-T1-GE3
Brand:: Vishay Siliconix

Technical data sheets

Datasheet

Legislation and Compliance

RoHS Status: Not Applicable

Product Details

TrenchFET® Gen IV power MOSFET
High side and low side MOSFETs form optimized combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	30 V
Series	TrenchFET
Package Type	PowerPAIR 3 x 3
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	10 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	2.4V
Maximum Power Dissipation	16.7 W
Maximum Gate Source Voltage	-16 V, +20 V
Width	3mm
Number of Elements per Chip	2
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	3mm
Typical Gate Charge @ Vgs	12.1 nC @ 10 V
Height	0.75mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix SiZ348DT-T1-GE3

Technical data sheets

Legislation and Compliance

Product Details

Specifications

Related links