Dual N-Channel MOSFET, 197 (Channel 2) A, 76 (Channel 1) A, 30 (Channel 1) V, 30 (Channel 2) V, 8-Pin PowerPAIR 6 x 5 F

RS Stock No.:: 188-4910
Mfr. Part No.:: SiZF920DT-T1-GE3
Brand:: Vishay

Dual N-Channel MOSFET, 197 (Channel 2) A, 76 (Channel 1) A, 30 (Channel 1) V, 30 (Channel 2) V, 8-Pin PowerPAIR 6 x 5 F

999999 In stock for delivery within 1 working day(s)

Price (ex. GST) Each (On a Reel of 3000)

$1.476

(exc. GST)

$1.624

(inc. GST)

Units	Per unit	Per Reel*
3000 - 3000	$1.476	$4,428.00
6000 - 9000	$1.439	$4,317.00
12000 +	$1.417	$4,251.00

*price indicative

RS Stock No.:: 188-4910
Mfr. Part No.:: SiZF920DT-T1-GE3
Brand:: Vishay

Datasheet SiZF920DT-T1-GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	197 (Channel 2) A, 76 (Channel 1) A
Maximum Drain Source Voltage	30 (Channel 1) V, 30 (Channel 2) V
Package Type	PowerPAIR 6 x 5 F
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	0.0014 (Channel 2) Ω, 0.005 (Channel 1) Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2 (Channel 2) V, 2.4 (Channel 1) V
Minimum Gate Threshold Voltage	1.1 (Channel 1) V, 1.1 (Channel 2) V
Maximum Power Dissipation	28 W, 74 W
Transistor Configuration	Dual
Maximum Gate Source Voltage	+16 V, +20 V, -12 V, -16 V
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	19 nC @ 15 V (Channel 1), 83 nC @ 15 V (Channel 2)
Width	5.1mm
Maximum Operating Temperature	+150 °C
Length	6.1mm
Height	0.7mm
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 197 (Channel 2) A, 76 (Channel 1) A, 30 (Channel 1) V, 30 (Channel 2) V, 8-Pin PowerPAIR 6 x 5 F

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