- RS Stock No.:
- 185-9275
- Mfr. Part No.:
- NVMFS5H663NLT1G
- Brand:
- onsemi
3000 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Pack of 8)
$1.93
(exc. GST)
$2.12
(inc. GST)
Units | Per unit | Per Pack* |
---|---|---|
8 - 368 | $1.93 | $15.44 |
376 - 744 | $1.881 | $15.048 |
752 + | $1.853 | $14.824 |
*price indicative
- RS Stock No.:
- 185-9275
- Mfr. Part No.:
- NVMFS5H663NLT1G
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Non Compliant
- COO (Country of Origin):
- MY
Product Details
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
PPAP Capable
These Devices are Pb−Free
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
PPAP Capable
These Devices are Pb−Free
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 67 A |
Maximum Drain Source Voltage | 60 V |
Package Type | DFN |
Mounting Type | Surface Mount |
Pin Count | 5 |
Maximum Drain Source Resistance | 10 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 63 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Maximum Operating Temperature | +175 °C |
Number of Elements per Chip | 1 |
Width | 6.1mm |
Length | 5.1mm |
Typical Gate Charge @ Vgs | 17 nC @ 10 V |
Automotive Standard | AEC-Q101 |
Height | 1.05mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.2V |
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