Diodes Inc N-Channel MOSFET, 900 mA, 20 V, 3-Pin X1-DFN1212 DMN2450UFD-7
- RS Stock No.:
- 182-6892
- Mfr. Part No.:
- DMN2450UFD-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 reel of 3000 units)**
$240.00
(exc. GST)
$270.00
(inc. GST)
6000 In Global stock for delivery within 10 working day(s)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $60.00 ex GST
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Units | Per unit | Per Reel** |
|---|---|---|
| 3000 - 3000 | $0.08 | $240.00 |
| 6000 - 9000 | $0.078 | $234.00 |
| 12000 + | $0.077 | $231.00 |
**price indicative
- RS Stock No.:
- 182-6892
- Mfr. Part No.:
- DMN2450UFD-7
- Brand:
- DiodesZetex
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 900 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | X1-DFN1212 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.45V | |
| Maximum Power Dissipation | 890 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±12 V | |
| Length | 1.25mm | |
| Typical Gate Charge @ Vgs | 0.7 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.25mm | |
| Number of Elements per Chip | 1 | |
| Height | 0.48mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 900 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type X1-DFN1212 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.45V | ||
Maximum Power Dissipation 890 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±12 V | ||
Length 1.25mm | ||
Typical Gate Charge @ Vgs 0.7 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.25mm | ||
Number of Elements per Chip 1 | ||
Height 0.48mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
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