Vishay TrenchFET Type P-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 SQD50P06-15L_GE3

RS Stock No.:: 180-7967
Mfr. Part No.:: SQD50P06-15L_GE3
Brand:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 SQD50P06-15L_GE3

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Bulk discount available

Subtotal (1 pack of 5 units)*

$26.85

(exc. GST)

$29.55

(inc. GST)

FREE delivery for orders over $60.00 ex GST

Last RS stock

Plus 125 unit(s) shipping from 19 January 2026
Final 1,360 unit(s) shipping from 26 January 2026

Units	Per unit	Per Pack*
5 - 495	$5.37	$26.85
500 - 995	$5.236	$26.18
1000 +	$5.156	$25.78

*price indicative

RS Stock No.:: 180-7967
Mfr. Part No.:: SQD50P06-15L_GE3
Brand:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	20mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	98nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	136W
	Forward Voltage Vf	-1.5V
	Maximum Operating Temperature	175°C
	Height	2.38mm
	Length	10.41mm
	Width	6.73 mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 20mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 98nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 136W
	Forward Voltage Vf -1.5V
	Maximum Operating Temperature 175°C
	Height 2.38mm
	Length 10.41mm
	Width 6.73 mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet

COO (Country of Origin):: TW

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 15.5mohm at a gate-source voltage of 10V. It has continuous drain current of 50A and maximum power dissipation of 136W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• Package with low thermal resistance

• TrenchFET power MOSFET

Applications

• Adaptor switch

• Load switches

Certifications

• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested