Vishay TrenchFET Type P-Channel MOSFET, 50 A, 20 V Enhancement, 8-Pin SO-8 SIR401DP-T1-GE3

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Subtotal (1 pack of 5 units)*

$9.46

(exc. GST)

$10.405

(inc. GST)

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Units
Per unit
Per Pack*
5 - 745$1.892$9.46
750 - 1495$1.884$9.42
1500 +$1.876$9.38

*price indicative

Packaging Options:
RS Stock No.:
787-9342
Mfr. Part No.:
SIR401DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

20V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

205nC

Maximum Power Dissipation Pd

39W

Forward Voltage Vf

-1.1V

Maximum Gate Source Voltage Vgs

12 V

Maximum Operating Temperature

150°C

Width

5.26 mm

Length

6.25mm

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


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