N-Channel MOSFET, 9.5 A, 80 V, 8-Pin SO-8 Vishay SI4896DY-T1-E3

RS Stock No.:: 180-7296
Mfr. Part No.:: SI4896DY-T1-E3
Brand:: Vishay

N-Channel MOSFET, 9.5 A, 80 V, 8-Pin SO-8 Vishay SI4896DY-T1-E3

1 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 2500)

$1.958

(exc. GST)

$2.154

(inc. GST)

Units	Per unit	Per Reel*
2500 - 2500	$1.958	$4,895.00
5000 - 7500	$1.951	$4,877.50
10000 +	$1.929	$4,822.50

*price indicative

RS Stock No.:: 180-7296
Mfr. Part No.:: SI4896DY-T1-E3
Brand:: Vishay

Technical data sheets

Datasheet

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 16.5mohm at a gate-source voltage of 10V. It has power dissipation of 1.56W and continuous drain current of 6.7A. The minimum and a maximum driving voltage for this MOSFET is 6V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications

• Adaptor switch
• Load switches

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.5 A
Maximum Drain Source Voltage	80 V
Package Type	SO-8
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	0.022 O
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Number of Elements per Chip	1