N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON Infineon BSC028N06NSATMA1

RS Stock No.:: 178-7485
Mfr. Part No.:: BSC028N06NSATMA1
Brand:: Infineon

N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON Infineon BSC028N06NSATMA1

This image is representative of the product range

820 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 5000)

$2.076

(exc. GST)

$2.284

(inc. GST)

Units	Per unit	Per Reel*
5000 - 20000	$2.076	$10,380.00
25000 +	$1.869	$9,345.00

*price indicative

RS Stock No.:: 178-7485
Mfr. Part No.:: BSC028N06NSATMA1
Brand:: Infineon

Technical data sheets

BSC028N06NS OptiMOS Power-Transistor

Legislation and Compliance

RoHS Status: Not Applicable

Product Details

Infineon OptiMOS™5 Power MOSFETs

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	60 V
Package Type	TDSON
Series	OptiMOS™ 5
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	4.2 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	83 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	6.1mm
Typical Gate Charge @ Vgs	37 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	5.35mm
Height	1.1mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V